Liquid crystal panel and manufacture method thereof

ABSTRACT

The present invention provides a liquid crystal panel and a manufacture method thereof. The liquid crystal panel comprises: a first substrate ( 1 ), a TFT layer ( 2 ) located on the first substrate ( 1 ), a color resist layer ( 3 ) located on the TFT layer ( 2 ), a photospacer layer ( 4 ) located on the color resist layer ( 3 ), a protective layer ( 5 ) located on the color resist layer ( 3 ) and the photospacer layer ( 4 ), a via hole ( 6 ) penetrating the color resist layer ( 3 ) and the protective layer ( 5 ), a pixel electrode layer ( 7 ) formed on the protective layer ( 5 ) and electrically connected to the TFT layer ( 2 ) with the via hole ( 6 ) and a second substrate ( 8 ) oppositely located to the first substrate ( 1 ), and one or more color resist material in the photospacer layer ( 4 ) and the color resist layer ( 3 ) are the same, and the photospacer layer ( 4 ) and the color resist layer ( 3 ) are formed at the same time during a manufacture process.

FIELD OF THE INVENTION

The present invention relates to a display technology field, and moreparticularly to a liquid crystal panel and a manufacture method thereof.

BACKGROUND OF THE INVENTION

With the development of display technology, the flat panel device, suchas Liquid Crystal Display (LCD) possesses advantages of high imagequality, power saving, thin body and wide application scope. Thus, ithas been widely applied in various consumer electrical products, such asmobile phone, television, personal digital assistant, digital camera,notebook, laptop, and becomes the major display device.

Most of the liquid crystal displays on the present market are back lighttype liquid crystal displays, which comprise a liquid crystal displaypanel and a back light module. The working principle of the liquidcrystal display panel is to locate liquid crystal molecules between twoparallel glass substrates, and a plurality of vertical and horizontaltiny electrical wires are between the two glass substrates. The light ofback light module is reflected to generate images by applying drivingvoltages to control whether the liquid crystal molecules to be changeddirections.

Generally, the liquid crystal display panel comprises a CF (ColorFilter) substrate, a TFT (Thin Film Transistor) substrate, LC (LiquidCrystal) sandwiched between the CF substrate and the TFT substrate andsealant. The formation process generally comprises: a forepart Arrayprocess (thin film, photo, etching and stripping), a middle Cell process(Lamination of the TFT substrate and the CF substrate) and a post moduleassembly process (Attachment of the driving IC and the printed circuitboard). The forepart Array process is mainly to form the TFT substratefor controlling the movement of the liquid crystal molecules; the middleCell process is mainly to add liquid crystal between the TFT substrateand the CF substrate; the post module assembly process is mainly thedriving IC attachment and the integration of the printed circuit board.Thus, the liquid crystal molecules are driven to rotate and displaypictures.

The Active Matrix (AM) liquid crystal display is the most common liquidcrystal display at present. The AMLCD manufacture technology utilizesthe skill of manufacturing Color Filter on Array (COA) on the TFT arraysubstrate, which can raise the aperture ratio of the liquid crystalpanel and reduce the parasitic capacitance. Because the COA skill isutilized in the manufacture process, one side of the TFT array substrateis flatter, and the photospacer (PS) can be manufactured on one side ofthe TFT array substrate. The location of the photospacer is fixed at theone side of the TFT array substrate for reducing the probability of MMmura (phenomena of picture misalignment and uneven brightness)occurrence, and meanwhile, lowering the alignment demands for the upper,lower substrates in the lamination process.

However, the photospacer is formed at the one side of the TFT arraysubstrate, one photo process is added at the one side of the TFT arraysubstrate, which can extend the Array process time and diminish theproduction efficiency.

Please refer to FIG. 1, which is a COA type liquid crystal panel. In themanufacture process of the one side of the TFT array substrate, the TFTlayer 200, the color resist layer 300, the protective layer 400, thepixel electrode layer 500 and the photospacer layer 600 are sequentiallyformed on the lower substrate. One photo process of the photospacerlayer 600 is added, thus, the Array process time is longer and theproduction efficiency is diminished.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a liquid crystalpanel, capable of reducing the probability of MM mura occurrence, andlowering the alignment demands for the upper, lower substrates in thelamination process.

Another objective of the present invention is to provide a manufacturemethod of a liquid crystal panel, capable of simplifying the process,saving the mask, and raising the production efficiency.

For realizing the aforesaid objectives, the present invention provides aliquid crystal panel, comprising a first substrate, a TFT layer locatedon the first substrate, a color resist layer located on the TFT layer, aphotospacer layer located on the color resist layer, a protective layerlocated on the color resist layer and the photospacer layer, a via holepenetrating the color resist layer and the protective layer, a pixelelectrode layer formed on the protective layer and electricallyconnected to the TFT layer with the via hole and a second substrateoppositely located to the first substrate, wherein one or more colorresist material in the photospacer layer and the color resist layer arethe same, and the photospacer layer and the color resist layer areformed at the same time during a manufacture process.

The color resist layer comprises a first color resist, a second colorresist and a third color resist, and the photospacer layer comprises amain photospacer and a sub photospacer, and a height of the mainphotospacer is larger than a height of the sub photospacer, and the subphotospacer is located on the first color resist, and the mainphotospacer is located on the second color resist; material of the subphotospacer and material of the second color resist are the same, andthe two are formed in the same photo process; material of the mainphotospacer and material of the third color resist are the same, and thetwo are formed in the same photo process.

The color resist layer comprises a first color resist, a second colorresist and a third color resist, and the photospacer layer comprises amain photospacer and a sub photospacer, and a height of the mainphotospacer is larger than a height of the sub photospacer, and the mainphotospacer and the sub photospacer are located on the first colorresist; material of the main photospacer, material of the subphotospacer and material of the second color resist are the same, andthe three are formed in the same photo process.

The color resist layer comprises a first color resist, a second colorresist and a third color resist, and the photospacer layer comprises amain photospacer and a sub photospacer, and a height of the mainphotospacer is larger than a height of the sub photospacer, and the subphotospacer is located on the first color resist, and the mainphotospacer is located on the second color resist; material of the mainphotospacer, material of the sub photospacer and material of the thirdcolor resist are the same, and the three are formed in the same photoprocess.

The color resist layer comprises a first color resist, a second colorresist, a third color resist and a fourth color resist, and thephotospacer layer comprises a main photospacer and a sub photospacer,and a height of the main photospacer is larger than a height of the subphotospacer.

The present invention further provides a manufacture method of a liquidcrystal panel, comprising steps of:

step 1, providing a first substrate, and deposing a TFT layer on thefirst substrate;

step 2, forming a color resist layer and a photospacer layer on the TFTlayer, and the photospacer layer is located on the color resist layer,and formed with the color resist layer at the same time in themanufacture process.

step 3, forming a protective layer on the color resist layer and thephotospacer layer, and forming a via hole in the color resist layer andthe protective layer by dry etching or wet etching;

step 4, forming an ITO thin film on the protective layer by sputtering,and forming a pixel electrode layer by wet etching, and the pixelelectrode layer is electrically connected to the TFT layer with the viahole;

step 5, providing a second substrate, and injecting liquid crystalmolecules between the first substrate and the second substrate, andpackaging the first substrate and the second substrate.

The specific steps of step 2 comprise:

in the step 2, the color resist layer comprises a first color resist, asecond color resist and a third color resist, and the photospacer layercomprises a main photospacer and a sub photospacer, and a height of themain photospacer is larger than a height of the sub photospacer;

step 21, coating a first color resist film layer on the TFT layer, andforming the first color resist by photolithography;

step 22, coating a second color resist film layer on the TFT layer andthe first color resist, and forming the sub photospacer on the firstcolor resist and the second color resist on the TFT layer at the sametime by one photo process;

step 23, coating a third color resist film layer on the TFT layer, thefirst color resist and the second color resist, and forming the mainphotospacer on the second color resist and the third color resist on theTFT layer at the same time by one photo process;

wherein a thickness of the third color resist film layer coated in thestep 23 is larger than a thickness of the second color resist coated inthe step 22, and a height of the main photospacer formed in the step 23is larger than a height of the sub photospacer formed in the step 22.

The specific steps of step 2 comprise:

in the step 2, the color resist layer comprises a first color resist, asecond color resist and a third color resist, and the photospacer layercomprises a main photospacer and a sub photospacer, and a height of themain photospacer is larger than a height of the sub photospacer;

step 21, coating a first color resist film layer on the TFT layer, andforming the first color resist by photolithography;

step 22, coating a second color resist film layer on the TFT layer andthe first color resist, and forming the main photospacer, the subphotospacer on the first color resist and the second color resist on theTFT layer at the same time by half tone mesh dot photo process;

The specific steps of step 2 comprise:

in the step 2, the color resist layer comprises a first color resist, asecond color resist and a third color resist, and the photospacer layercomprises a main photospacer and a sub photospacer, and a height of themain photospacer is larger than a height of the sub photospacer;

step 21, coating a first color resist film layer on the TFT layer, andforming the first color resist by photolithography;

step 22, coating a second color resist film layer on the TFT layer, andforming the second color resist by photolithography;

step 23, coating a third color resist film layer on the TFT layer, thefirst color resist and the second color resist, and forming the subphotospacer on the first color resist and the main photospacer on thesecond color resist and the third color resist on the TFT layer at thesame time by half tone mesh dot photo process.

In the step 2, the color resist layer comprises a first color resist, asecond color resist, a third color resist and a fourth color resist, andthe photospacer layer comprises a main photospacer and a subphotospacer, and a height of the main photospacer is larger than aheight of the sub photospacer.

The present invention further provides a liquid crystal panel,comprising a first substrate, a TFT layer located on the firstsubstrate, a color resist layer located on the TFT layer, a photospacerlayer located on the color resist layer, a protective layer located onthe color resist layer and the photospacer layer, a via hole penetratingthe color resist layer and the protective layer, a pixel electrode layerformed on the protective layer and electrically connected to the TFTlayer with the via hole and a second substrate oppositely located to thefirst substrate, and one or more color resist material in thephotospacer layer and the color resist layer are the same, and thephotospacer layer and the color resist layer are formed at the same timeduring a manufacture process;

wherein the color resist layer comprises a first color resist, a secondcolor resist and a third color resist, and the photospacer layercomprises a main photospacer and a sub photospacer, and a height of themain photospacer is larger than a height of the sub photospacer, and thesub photospacer is located on the first color resist, and the mainphotospacer is located on the second color resist; material of the subphotospacer and material of the second color resist are the same, andthe two are formed in the same photo process; material of the mainphotospacer and material of the third color resist are the same, and thetwo are formed in the same photo process.

The benefits of the present invention are: the present inventionprovides a manufacture method of a liquid crystal panel, which forms thephotospacer layer as manufacturing the color resist layer at the sametime. By utilizing the thickness difference of different color resistfilm layers or forming the main photospacer and the sub photospacer ofdifferent heights by half tone mesh dot photo process, the manufacturemethod can simplify the process, save the mask, and raise the productionefficiency. The present invention provides a liquid crystal panel thatutilizes the color resist material to form the photospacer layer at aside of the array substrate. Thus, the probability of MM mura occurrencecan be reduced, and the alignment demands for the upper, lowersubstrates in the lamination process can be lowered.

In order to better understand the characteristics and technical aspectof the invention, please refer to the following detailed description ofthe present invention is concerned with the diagrams, however, providereference to the accompanying drawings and description only and is notintended to be limiting of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The technical solution and the beneficial effects of the presentinvention are best understood from the following detailed descriptionwith reference to the accompanying figures and embodiments.

In drawings,

FIG. 1 is a structural diagram of a liquid crystal panel according toprior art;

FIG. 2 is a flowchart of a manufacture method of a liquid crystal panelaccording to the present invention;

FIG. 3 is a structural diagram of a liquid crystal panel according tothe first embodiment of the present invention;

FIG. 4 is a structural diagram of a liquid crystal panel according tothe second embodiment of the present invention;

FIG. 5 is a diagram of the step 22 in the manufacture method of theliquid crystal panel according to the second embodiment of the presentinvention;

FIG. 6 is a structural diagram of a liquid crystal panel according tothe third embodiment of the present invention;

FIG. 7 is a diagram of the step 23 in the manufacture method of theliquid crystal panel according to the third embodiment of the presentinvention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

For better explaining the technical solution and the effect of thepresent invention, the present invention will be further described indetail with the accompanying drawings and the specific embodiments.

Please refer to FIG. 3, which is a structural diagram of a liquidcrystal panel according to the first embodiment of the presentinvention. As shown in FIG. 3, the present invention provides a liquidcrystal panel, comprising a first substrate 1, a TFT layer 2 located onthe first substrate 1, a color resist layer 3 located on the TFT layer2, a photospacer layer 4 located on the color resist layer 3, aprotective layer 5 located on the color resist layer 3 and thephotospacer layer 4, a via hole 6 penetrating the color resist layer 3and the protective layer 5, a pixel electrode layer 7 formed on theprotective layer 5 and electrically connected to the TFT layer 2 withthe via hole 6 and a second substrate 8 oppositely located to the firstsubstrate 1. One or more color resist material in the photospacer layer4 and the color resist layer 3 are the same, and the photospacer layer 4and the color resist layer 3 are formed at the same time during amanufacture process.

The color resist layer 3 comprises a first color resist 31, a secondcolor resist 32 and a third color resist 33. The first, the second andthe third color resists respectively are arbitrary arrangement andcombination of red color resist, green color resist and blue colorresist. The photospacer layer 4 comprises a main photospacer 41 and asub photospacer 42, and a height of the main photospacer 41 is largerthan a height of the sub photospacer 42.

In the first embodiment of the present invention, the sub photospacer 42is located on the first color resist 31, and the main photospacer 41 islocated on the second color resist 32; material of the sub photospacer42 and material of the second color resist 32 are the same, and the twoare formed in the same photo process; material of the main photospacer41 and material of the third color resist 33 are the same, and the twoare formed in the same photo process.

Preferably, both the first substrate 1 and the second substrate 8 areglass substrates.

Specifically, the TFT layer 2 comprises a first metal layer 21, a gateisolation layer 22, a semiconductor layer 23, a second metal layer 24and a protective layer 25. The semiconductor layer 23 can be a doublelayer structure composed by an a-Si layer and an n⁺Si layer, or a singlelayer structure constructed by IGZO (Indium Gallium Zinc Oxide) layer;the material of the first metal layer 21 and the second metal layer 24can be copper or aluminum.

Please refer to FIG. 2. The manufacture method of a liquid crystal panelaccording to the first embodiment of the present invention comprisessteps of:

step 1, providing a first substrate 1, and deposing a TFT layer 2 on thefirst substrate 1.

Specifically, the TFT layer 2 comprises a first metal layer 21, a gateisolation layer 22, a semiconductor layer 23, a second metal layer 24and a protective layer 25. The semiconductor layer 23 can be a doublelayer structure composed by an a-Si layer and an n⁺Si layer, or a singlelayer structure constructed by IGZO (Indium Gallium Zinc Oxide) layer;the material of the first metal layer 21 and the second metal layer 24can be copper or aluminum.

step 2, forming a color resist layer 3 and a photospacer layer 4 on theTFT layer 2, and the photospacer layer 4 is located on the color resistlayer 3, and formed with the color resist layer 3 at the same time inthe manufacture process.

Specifically, the color resist layer 3 comprises a first color resist31, a second color resist 32 and a third color resist 33. The first, thesecond and the third color resists respectively are arbitraryarrangement and combination of red color resist, green color resist andblue color resist. The photospacer layer 4 comprises a main photospacer41 and a sub photospacer 42, and a height of the main photospacer 41 islarger than a height of the sub photospacer 42.

In the first embodiment, the step 2 comprises specific steps of:

step 21, coating a first color resist film layer on the TFT layer 2, andforming the first color resist 31 by photolithography.

step 22, coating a second color resist film layer on the TFT layer 2 andthe first color resist 31, and forming the sub photospacer 42 on thefirst color resist 31 and the second color resist 32 on the TFT layer 2at the same time by one photo process.

step 23, coating a third color resist film layer on the TFT layer 2, thefirst color resist 31 and the second color resist 32, and forming themain photospacer 41 on the second color resist 32 and the third colorresist 33 on the TFT layer 2 at the same time by one photo process.

A thickness of the third color resist film layer coated in the step 23is larger than a thickness of the second color resist coated in the step22, and a height of the main photospacer 41 formed in the step 23 islarger than a height of the sub photospacer 42 formed in the step 22.

step 3, forming a protective layer 5 on the color resist layer 3 and thephotospacer layer 4, and forming a via hole 6 in the color resist layer3 and the protective layer 5 by dry etching or wet etching.

step 4, forming an ITO thin film on the protective layer 5 bysputtering, and forming a pixel electrode layer 7 by wet etching, andthe pixel electrode layer 7 is electrically connected to the TFT layer 2with the via hole 6.

step 5, providing a second substrate 8, and injecting liquid crystalmolecules between the first substrate 1 and the second substrate 8, andpackaging the first substrate 1 and the second substrate 8.

Preferably, both the first substrate 1 and the second substrate 8 areglass substrates.

Please refer to FIG. 4, which is a structure diagram of the liquidcrystal panel according to the second embodiment of the presentinvention. Compared with the structure of the first embodiment of thepresent invention, the difference is that the structure of thephotospacer layer 4 is slightly different.

In the liquid crystal panel according to the second embodiment of thepresent invention, the color resist layer 3 comprises a first colorresist 31, a second color resist 32 and a third color resist 33 whichare sequentially arranged, and the photospacer layer 4 comprises a mainphotospacer 41 and a sub photospacer 42, and a height of the mainphotospacer 41 is larger than a height of the sub photospacer 42.

Both the main photospacer 41 and the sub photospacer 42 of thephotospacer layer 4 are located on the first color resist 31. Materialof the main photospacer 41, material of the sub photospacer 42 andmaterial of the second color resist 32 in the color resist layer 3 arethe same, and the three are formed in the same photo process.

The manufacture method of the liquid crystal panel according to thesecond embodiment of the present invention is similar with themanufacture method of the liquid crystal panel according to the firstembodiment of the present invention. The difference is that the specificsteps of the step 2 are different. In the manufacture method of theliquid crystal panel according to the second embodiment of the presentinvention, the specific steps of the step 2 comprise:

step 21, coating a first color resist film layer on the TFT layer 2, andforming the first color resist 31 by photolithography.

step 22, as shown in FIG. 5, coating a second color resist film layer onthe TFT layer 2 and the first color resist 31, and forming the mainphotospacer 41, the sub photospacer 42 on the first color resist 31 andthe second color resist 32 on the TFT layer 2 at the same time by halftone mesh dot photo process.

In the step 22, with utilizing the half tone mesh dot photo process tomanufacture the main photospacer 41 and the sub photospacer 42 ofdifferent heights at the same time, it can simplify the process, savethe mask, and raise the production efficiency.

step 23, coating a third color resist film layer on the TFT layer 2, thefirst color resist 31 and the second color resist 32, and forming thethird color resist 33 by photolithography.

Please refer to FIG. 6, which is a structure diagram of the liquidcrystal panel according to the third embodiment of the presentinvention. Compared with the structure of the first embodiment of thepresent invention, the difference is that the structure of thephotospacer layer 4 is slightly different.

In the liquid crystal panel according to the third embodiment of thepresent invention, the color resist layer 3 comprises a first colorresist 31, a second color resist 32 and a third color resist 33 whichare sequentially arranged, and the photospacer layer 4 comprises a mainphotospacer 41 and a sub photospacer 42, and a height of the mainphotospacer 41 is larger than a height of the sub photospacer 42.

The sub photospacer 42 is located on the first color resist 31, and themain photospacer 41 is located on the second color resist 32, andmaterial of the main photospacer 41, material of the sub photospacer 42and material of the third color resist 33 are the same, and the threeare formed in the same photo process.

The manufacture method of the liquid crystal panel according to thethird embodiment of the present invention is similar with themanufacture method of the liquid crystal panel according to the firstembodiment of the present invention. The difference is that the specificsteps of the step 2 are different. In the manufacture method of theliquid crystal panel according to the third embodiment of the presentinvention, the specific steps of the step 2 comprise:

step 21, coating a first color resist film layer on the TFT layer 2, andforming the first color resist 31 by photolithography.

step 22, coating a second color resist film layer on the TFT layer 2,and forming the second color resist 32 by photolithography.

step 23, as shown in FIG. 7, coating a third color resist film layer onthe TFT layer 2, the first color resist 31 and the second color resist32, and forming the sub photospacer 42 on the first color resist 31, themain photospacer 41 on the second color resist 32 and the third colorresist 33 on the TFT layer 2 at the same time by half tone mesh dotphoto process.

In the step 23, with utilizing the half tone mesh dot photo process tomanufacture the main photospacer 41 and the sub photospacer 42 ofdifferent heights at the same time, it can simplify the process, savethe mask, and raise the production efficiency.

The invention structure of the present invention is similarly applied tothe condition that the color resist layer comprises four color resists,i.e. the color resist layer comprises a first color resist, a secondcolor resist, a third color resist and a fourth color resist. The first,the second, the third and the fourth color resists respectively arearbitrary arrangement and combination of red color resist, green colorresist, blue color resist and white color resist or arbitraryarrangement and combination of red color resist, green color resist,blue color resist and yellow color resist.

In conclusion, the present invention provides a liquid crystal panelthat utilizes the color resist material to form the photospacer layer ata side of the array substrate. Thus, the probability of MM muraoccurrence can be reduced, and the alignment demands for the upper,lower substrates in the lamination process can be lowered. The presentinvention further provides a manufacture method of a liquid crystalpanel, which forms the photospacer layer as manufacturing the colorresist layer at the same time. By utilizing the thickness difference ofdifferent color resist film layers or forming the main photospacer andthe sub photospacer of different heights by half tone mesh dot photoprocess, the manufacture method can simplify the process, save the mask,and raise the production efficiency.

Above are only specific embodiments of the present invention, the scopeof the present invention is not limited to this, and to any persons whoare skilled in the art, change or replacement which is easily derivedshould be covered by the protected scope of the invention. Thus, theprotected scope of the invention should go by the subject claims.

What is claimed is:
 1. A liquid crystal panel, comprising a firstsubstrate, a TFT layer located on the first substrate, a color resistlayer located on the TFT layer, a photospacer layer located on the colorresist layer, a protective layer located on the color resist layer andthe photospacer layer, a via hole penetrating the color resist layer andthe protective layer, a pixel electrode layer formed on the protectivelayer and electrically connected to the TFT layer with the via hole anda second substrate oppositely located to the first substrate, and one ormore color resist material in the photospacer layer and the color resistlayer are the same, and the photospacer layer and the color resist layerare formed at the same time during a manufacture process.
 2. The liquidcrystal panel according to claim 1, wherein the color resist layercomprises a first color resist, a second color resist and a third colorresist, and the photospacer layer comprises a main photospacer and a subphotospacer, and a height of the main photospacer is larger than aheight of the sub photospacer, and the sub photospacer is located on thefirst color resist, and the main photospacer is located on the secondcolor resist; material of the sub photospacer and material of the secondcolor resist are the same, and the two are formed in the same photoprocess; material of the main photospacer and material of the thirdcolor resist are the same, and the two are formed in the same photoprocess.
 3. The liquid crystal panel according to claim 1, wherein thecolor resist layer comprises a first color resist, a second color resistand a third color resist, and the photospacer layer comprises a mainphotospacer and a sub photospacer, and a height of the main photospaceris larger than a height of the sub photospacer, and the main photospacerand the sub photospacer are located on the first color resist; materialof the main photospacer, material of the sub photospacer and material ofthe second color resist are the same, and the three are formed in thesame photo process.
 4. The liquid crystal panel according to claim 1,wherein the color resist layer comprises a first color resist, a secondcolor resist and a third color resist, and the photospacer layercomprises a main photospacer and a sub photospacer, and a height of themain photospacer is larger than a height of the sub photospacer, and thesub photospacer is located on the first color resist, and the mainphotospacer is located on the second color resist; material of the mainphotospacer, material of the sub photospacer and material of the thirdcolor resist are the same, and the three are formed in the same photoprocess.
 5. The liquid crystal panel according to claim 1, wherein thecolor resist layer comprises a first color resist, a second colorresist, a third color resist and a fourth color resist, and thephotospacer layer comprises a main photospacer and a sub photospacer,and a height of the main photospacer is larger than a height of the subphotospacer.
 6. A manufacture method of a liquid crystal panel,comprising steps of: step 1, providing a first substrate, and deposing aTFT layer on the first substrate; step 2, forming a color resist layerand a photospacer layer on the TFT layer, and the photospacer layer islocated on the color resist layer, and formed with the color resistlayer at the same time in the manufacture process. step 3, forming aprotective layer on the color resist layer and the photospacer layer,and forming a via hole in the color resist layer and the protectivelayer by dry etching or wet etching; step 4, forming an ITO thin film onthe protective layer by sputtering, and forming a pixel electrode layerby wet etching, and the pixel electrode layer is electrically connectedto the TFT layer with the via hole; step 5, providing a secondsubstrate, and injecting liquid crystal molecules between the firstsubstrate and the second substrate, and packaging the first substrateand the second substrate.
 7. The manufacture method of the liquidcrystal panel according to claim 6, wherein the step 2 comprisesspecific steps of: in the step 2, the color resist layer comprises afirst color resist, a second color resist and a third color resist, andthe photospacer layer comprises a main photospacer and a subphotospacer, and a height of the main photospacer is larger than aheight of the sub photospacer; step 21, coating a first color resistfilm layer on the TFT layer, and forming the first color resist byphotolithography; step 22, coating a second color resist film layer onthe TFT layer and the first color resist, and forming the subphotospacer on the first color resist and the second color resist on theTFT layer at the same time by one photo process; step 23, coating athird color resist film layer on the TFT layer, the first color resistand the second color resist, and forming the main photospacer on thesecond color resist and the third color resist on the TFT layer at thesame time by one photo process; wherein a thickness of the third colorresist film layer coated in the step 23 is larger than a thickness ofthe second color resist coated in the step 22, and a height of the mainphotospacer formed in the step 23 is larger than a height of the subphotospacer formed in the step
 22. 8. The manufacture method of theliquid crystal panel according to claim 6, wherein the step 2 comprisesspecific steps of: in the step 2, the color resist layer comprises afirst color resist, a second color resist and a third color resist, andthe photospacer layer comprises a main photospacer and a subphotospacer, and a height of the main photospacer is larger than aheight of the sub photospacer; step 21, coating a first color resistfilm layer on the TFT layer, and forming the first color resist byphotolithography; step 22, coating a second color resist film layer onthe TFT layer and the first color resist, and forming the mainphotospacer, the sub photospacer on the first color resist and thesecond color resist on the TFT layer at the same time by half tone meshdot photo process;
 9. The manufacture method of the liquid crystal panelaccording to claim 6, wherein the step 2 comprises specific steps of: inthe step 2, the color resist layer comprises a first color resist, asecond color resist and a third color resist, and the photospacer layercomprises a main photospacer and a sub photospacer, and a height of themain photospacer is larger than a height of the sub photospacer; step21, coating a first color resist film layer on the TFT layer, andforming the first color resist by photolithography; step 22, coating asecond color resist film layer on the TFT layer, and forming the secondcolor resist by photolithography; step 23, coating a third color resistfilm layer on the TFT layer, the first color resist and the second colorresist, and forming the sub photospacer on the first color resist andthe main photospacer on the second color resist and the third colorresist on the TFT layer at the same time by half tone mesh dot photoprocess.
 10. The manufacture method of the liquid crystal panelaccording to claim 6, wherein in the step 2, the color resist layercomprises a first color resist, a second color resist, a third colorresist and a fourth color resist, and the photospacer layer comprises amain photospacer and a sub photospacer, and a height of the mainphotospacer is larger than a height of the sub photospacer.
 11. A liquidcrystal panel, comprising a first substrate, a TFT layer located on thefirst substrate, a color resist layer located on the TFT layer, aphotospacer layer located on the color resist layer, a protective layerlocated on the color resist layer and the photospacer layer, a via holepenetrating the color resist layer and the protective layer, a pixelelectrode layer formed on the protective layer and electricallyconnected to the TFT layer with the via hole and a second substrateoppositely located to the first substrate, and one or more color resistmaterial in the photospacer layer and the color resist layer are thesame, and the photospacer layer and the color resist layer are formed atthe same time during a manufacture process; wherein the color resistlayer comprises a first color resist, a second color resist and a thirdcolor resist, and the photospacer layer comprises a main photospacer anda sub photospacer, and a height of the main photospacer is larger than aheight of the sub photospacer, and the sub photospacer is located on thefirst color resist, and the main photospacer is located on the secondcolor resist; material of the sub photospacer and material of the secondcolor resist are the same, and the two are formed in the same photoprocess; material of the main photospacer and material of the thirdcolor resist are the same, and the two are formed in the same photoprocess.